dpg 30 c 200pb advanced hiperfred2 symbol definition r a t i n g s features / advantages: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch typ. max. i fsm i r a a v 150 i fav a v f 1.25 r thjc 1.70 k/w v r = 123 min. 15 ms (50 hz), sine applications: antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) v rrm v 200 1 t vj v c = t vj c = ma 0.08 package: part number v r = t vj = c i f =a v t c = 140 c rectangular, d = 0.5 p tot 90 w t c c = a i rm 3 /dt i f =a; v r =v a t rr e a s tbd mj t vj c = i a s =a;l = h i a r a v a = tbd f = 10 khz 1.5v r typ.; t vj 175 c -55 high performance fast recovery diode low loss and soft recovery common cathode v i t rrm fav rr = = = 200 15 35 15 t vj =45c 20 -di f = 200 a/s 100 tbd 100 dpg 30 c 200pb v a ns 200 v 200 25 25 25 t p =10 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time conditions unit 1.50 t vj c = 25 c j tbd pf j unction capacitance v r =v; 100 t vj 150 v f0 v 0.69 t vj = 175 c r f 17.3 f = 1 mhz =c 25 m to-220ab v 1.00 t vj =c i f =a v 15 150 1.27 i f =a 30 i f =a 30 ns 35 ns industry standard outline epoxy meets ul 94v-0 rohs compliant t vj c =25 t vj c = 125 t vj c =25 t vj c = 125 2x threshold voltage slope resistance for power loss calculation only backside: cathode ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0629 * data according to iec 60747and per diode unless otherwise specified
dpg 30 c 200pb advanced i rms a per pin* 35 r thch k/w 0.25 m d nm 0.6 mounting torque 0.4 t st g c 150 storage temperature -55 weight g 2 c b f a h g l k j d n m e r q dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit * irms is typically limited by: 1. pin-to-chip resi stance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a no n-isolated backside, the whole cu rrent capability can be used by c onnecting the backside. outlines to-220ab f c n 60 mounting force with clip 20 ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0629 * data according to iec 60747and per diode unless otherwise specified
|